PH6325L,115
Nexperia BV
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionN-channel 25 V 6.3 mΩ logic level MOSFET in LFPAK
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-235
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTIN
- Terminal PositionSINGLE
- Number of Elements1
- Reference StandardIEC-60134
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)78.7 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min25 V
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)115 mJ
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0095 ohm
- Pulsed Drain Current-Max (IDM)236 A
- Time@Peak Reflow Temperature-Max (s)30
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PH6325L,115