PBHV9110DA_R1_00001
PANJIT International Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionBipolar Transistors - BJT NPN Low Vce(sat) Transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- VCEsat-Max0.6 V
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Number of Elements1
- Reference StandardIEC-61249; MIL-STD-750
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)40
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)1 A
- Power Dissipation-Max (Abs)1.25 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max100 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max1.25 W
- Transition Frequency-Nom (fT)100 MHz
- Collector-base Capacitance-Max10 pF
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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