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NX5530SA

Renesas Electronics Corp.

Renesas Electronics Corp. NX5530SA
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1550
  • Semiconductor Material
    InGaAsP
  • Forward Voltage-Max (V)
    4
  • Spectral Bandwidth (nm)
    10
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    60
  • Operating Temperature-Min (Cel)
    -20

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NX5530SA
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NX5530SA