NE5500234-T1-AZ
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionCEL Silicon Medium Power LDMOSFET RoHS directive compliant
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-F3
- ConfigurationN-Channel
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishTIN BISMUTH
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)1 A
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min20 V
- Operating Temperature-Max125 Cel
- Power Dissipation-Max (Abs)10 W
- Transistor Element MaterialSILICON
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NE5500234-T1-AZ