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NE3520S03-T1C-A

Renesas Electronics Corp.

Renesas Electronics Corp. NE3520S03-T1C-A
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8541.21.00.95
  • SB Code
    8541.21.00.80
  • JESD-30 Code
    S-PQMW-F4
  • Configuration
    SINGLE
  • Package Shape
    SQUARE
  • Package Style
    MICROWAVE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    HETERO-JUNCTION
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Position
    QUAD
  • Number of Elements
    1
  • Number of Terminals
    4
  • Power Gain-Min (Gp)
    11.5 dB
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    0.015 A
  • Highest Frequency Band
    K BAND
  • Transistor Application
    AMPLIFIER
  • DS Breakdown Voltage-Min
    4 V
  • Operating Temperature-Max
    125 Cel
  • Transistor Element Material
    GALLIUM ARSENIDE
  • Power Dissipation Ambient-Max
    0.165 W

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NE3520S03-T1C-A