NE1280200 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. NE1280200

Lifecycle status
Discontinued
Description
RF Power Field-Effect Transistor, 2-Element, K Band, N-Channel
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Operating Mode
DEPLETION MODE
Number of Elements
2
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
K BAND
Drain Current-Max (ID) (A)
0.6
DS Breakdown Voltage-Min (V)
10
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
2.5