MT58V1MV18DT-6
Micron Technology
- Lifecycle statusActive
- DescriptionIC SRAM 18MBIT PARALLEL 100TQFP
- Category
- ECCN3A991.B.2.A
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width14
- Length20
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PQFP-G100
- Memory Width18
- Organization1MX18
- Package CodeLQFP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLATPACK, LOW PROFILE
- Surface MountYES
- Terminal FormGULL WING
- Memory Density18874368
- Memory IC TypeCACHE SRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch.65
- Access Time-Max3.5
- Number of Words1048576
- Parallel/SerialPARALLEL
- Terminal FinishTin/Lead (Sn/Pb)
- Seated Height-Max1.6
- Temperature GradeCOMMERCIAL
- Terminal PositionQUAD
- Additional FeaturePIPELINED ARCHITECTURE
- Supply Current-Max250
- Number of Functions1
- Number of Terminals100
- Standby Current-Max.03
- Standby Voltage-Min2.38
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeQFP100,.63X.87
- Operating Temperature-Max70
- Operating Temperature-Min0
- Supply Voltage-Max (Vsup)2.625
- Supply Voltage-Min (Vsup)2.375
- Supply Voltage-Nom (Vsup)2.5
- Clock Frequency-Max (fCLK)166
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MT58V1MV18DT-6