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MS8E128LEFBSS2-70

MICROTECH SEMICONDUCTORS

MICROTECH SEMICONDUCTORS MS8E128LEFBSS2-70
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Technology
    CMOS
  • Toggle Bit
    YES
  • Data Polling
    YES
  • JESD-30 Code
    S-XPGA-P66
  • Memory Width
    32
  • Package Code
    PGA
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY Meter
  • Surface Mount
    NO
  • Terminal Form
    PIN/PEG
  • J-STD-609 Code
    e0
  • Memory IC Type
    EEPROM MODULE
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Write Protection
    SOFTWARE
  • DLA Qualification
    Not Qualified
  • Page Size (words)
    64
  • Temperature Grade
    MILITARY
  • Terminal Position
    PERPENDICULAR
  • Memory Organization
    32KX32
  • Number of Terminals
    66
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    70
  • Number of Words Code
    32K
  • Memory Density (bits)
    1048576
  • Package Body Material
    CERAMIC
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    32768
  • Standby Current-Max (A)
    0.0012
  • Supply Current-Max (mA)
    320
  • Package Equivalence Code
    PGA66,11X11
  • Endurance (Write/Erase Cycles)
    100000
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Write Cycle Time-Max (tWC) (ms)
    3
  • Screening Level / Reference Standard
    BS9000 Level S2

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MS8E128LEFBSS2-70
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MS8E128LEFBSS2-70