MRF837
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal FinishTIN LEAD
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)8 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)30
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.2 A
- Power Dissipation-Max (Abs)2.5 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max16 V
- Power Dissipation Ambient-Max1.88 W
- Collector-base Capacitance-Max2.5 pF
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MRF837
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MRF837