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ML961B25S

Mitsubishi Electric Corp.

Mitsubishi Electric Corp. ML961B25S
  • Shape
    ROUND
  • Size (mm)
    4
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Additional Feature
    HIGH RELIABILITY
  • Number of Functions
    1
  • Peak Wavelength (nm)
    1480
  • Output Power-Nom (mW)
    220
  • Semiconductor Material
    InGaAsP
  • Forward Current-Max (A)
    0.8
  • Forward Voltage-Max (V)
    2
  • Spectral Bandwidth (nm)
    3
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    40
  • Operating Temperature-Max (Cel)
    30
  • Operating Temperature-Min (Cel)
    20

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ML961B25S
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ML961B25S