Mitsubishi Electric Corp. ML861D2S
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    980
  • Semiconductor Material
    InGaAs/GaAs
  • Forward Current-Max (A)
    0.5
  • Forward Voltage-Max (V)
    2.5
  • Spectral Bandwidth (nm)
    3
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    30
  • Operating Temperature-Min (Cel)
    20

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ML861D2S
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ML861D2S