MGF4934AM
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)11.5
- Drain Current-Max (ID) (A)0.06
- Transistor Element MaterialGALLIUM ARSENIDE
- Operating Temperature-Max (Cel)125
- Power Dissipation Ambient-Max (W)0.05
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MGF4934AM