MGF1423BV-01 by Mitsubishi Electric Corp. | Sourcengine

Mitsubishi Electric Corp. MGF1423BV-01

Lifecycle status
Discontinued
Description
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CQMW-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
QUAD
Additional Feature
LOW NOISE, HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
9 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.08 A
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE