LMG3622REQR
Texas Instruments Incorporated
- Lifecycle statusActive
- Description650V 120mΩ GaN FET with integrated driver, protection and current sensing 38-VQFN -40 to 125
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PQCC-N38
- ConfigurationCOMPLEX
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals38
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min650
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
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LMG3622REQR