LMG3425R050RQZR
Texas Instruments Incorporated
- Lifecycle statusActive
- REACHREACH compliant
- Description600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode 54-VQFN -40 to 150
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.39.00.01
- SB Code8542.39.00.00
- JESD-30 CodeS-PQCC-N54
- ConfigurationCOMPLEX
- JESD-609 Codee4
- Package ShapeSQUARE
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishNICKEL PALLADIUM GOLD
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals54
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)56
- DS Breakdown Voltage-Min600
- Turn-off Time-Max (toff)86
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-40 Cel
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM NITRIDE
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max.055
- Time@Peak Reflow Temperature-Max (s)30
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