L2711T/R
POLYFET R F DEVICES
- Lifecycle statusContact Mfr
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Drain Current-Max (ID) (A)8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)36
0 suppliers available to buy or to bid for L2711T/R
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
L2711T/R
Send an RFQ
L2711T/R