KM44C256DP-8
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionFast Page DRAM, 256KX4, 80ns, CMOS, PDIP20
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.62
- Access ModeFAST PAGE
- Length (mm)26.4
- JESD-30 CodeR-PDIP-T20
- Memory Width4
- Package CodeDIP
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee0
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles512
- Number of Ports1
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Memory Organization256KX4
- Number of Functions1
- Number of Terminals20
- Terminal Pitch (mm)2.54
- Access Time-Max (ns)80
- Number of Words Code256K
- Memory Density (bits)1048576
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)5.08
- Supply Voltage-Max (V)5.5
- Supply Voltage-Min (V)4.5
- Supply Voltage-Nom (V)5
- Number of Words (words)262144
- Standby Current-Max (A)0.001
- Supply Current-Max (mA)50
- Package Equivalence CodeDIP20,.3
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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KM44C256DP-8