KM416C157BTR-8
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionFast Page DRAM, 256KX16, 80ns, CMOS, PDSO40
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length18.41 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE
- JESD-30 CodeR-PDSO-G40
- Memory Width16
- Organization256KX16
- Package CodeTSOP2-R
- Self RefreshNO
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density4194304 bit
- Memory IC TypeFAST PAGE DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles1024
- Reverse PinoutYES
- Terminal Pitch0.8 mm
- Access Time-Max80 ns
- Number of Ports1
- Number of Words262144 words
- Terminal FinishTin/Lead (Sn/Pb)
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
- Supply Current-Max60 mA
- Number of Functions1
- Number of Terminals40
- Standby Current-Max0.001 Amp
- Number of Words Code256K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSOP40/44,.46,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
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KM416C157BTR-8