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KFWAGH6U4M-DIB6T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. KFWAGH6U4M-DIB6T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.51
  • SB Code
    8542.32.00.50
  • Type
    NAND TYPE
  • Boot Block
    INDEPENDENT
  • Ready/Busy
    YES
  • Technology
    CMOS
  • Toggle Bit
    NO
  • Data Polling
    NO
  • JESD-30 Code
    R-PBGA-B63
  • Memory Width
    16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e3
  • Memory IC Type
    EEPROM CARD
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    MATTE TIN
  • DLA Qualification
    Not Qualified
  • Page Size (words)
    2K
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    1GX16
  • Number of Terminals
    63
  • Sector Size (words)
    256K
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    76
  • Number of Words Code
    1G
  • Memory Density (bits)
    17179869184
  • Package Body Material
    PLASTIC/EPOXY
  • Command User Interface
    YES
  • Number of Sectors/Size
    4K
  • Number of Words (words)
    1073741824
  • Programming Voltage (V)
    2.7
  • Standby Current-Max (A)
    0.00016
  • Supply Current-Max (mA)
    50
  • Package Equivalence Code
    BGA63,10X12,32
  • Moisture Sensitivity Level
    1
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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KFWAGH6U4M-DIB6T