K7Z163685A-HC30
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionLate-Write SRAM, 512KX36, 2.7ns, CMOS, PBGA209
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B209
- Memory Width36
- Package CodeBGA
- Output EnableNO
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee0
- Memory IC TypeLATE-WRITE SRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeaturePIPELINED ARCHITECTURE
- Memory Organization512KX36
- Number of Functions1
- Number of Terminals209
- Terminal Pitch (mm)1
- Access Time-Max (ns)2.7
- Number of Words Code512K
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)2.2
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)524288
- Standby Voltage-Min (V)1.7
- Package Equivalence CodeBGA209,11X19,40
- Clock Frequency-Max (MHz)300
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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