K7P401823B-H75 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K7P401823B-H75

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Late-Write SRAM, 256KX18, 7.5ns, CMOS, PBGA119
Category
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
256KX18
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
7.5
Number of Words Code
256K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
262144
Standby Current-Max (A)
0.12
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
270
Package Equivalence Code
BGA119,7X17,50
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0