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K4X28163PH-W100

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4X28163PH-W100
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Memory Width
    16
  • Organization
    8MX16
  • Memory Density
    134217728 bit
  • Memory IC Type
    DDR1 DRAM
  • Refresh Cycles
    4096
  • Access Time-Max
    8 ns
  • Number of Words
    8388608 words
  • Supply Current-Max
    100 mA
  • Standby Current-Max
    1.0E-5 Amp
  • Number of Words Code
    8M
  • Qualification Status
    Not Qualified
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    2,4,8,16
  • Interleaved Burst Length
    2,4,8,16
  • Package Equivalence Code
    WAFER
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Clock Frequency-Max (fCLK)
    133 MHz

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K4X28163PH-W100
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K4X28163PH-W100