K4C89363AF-GCF5
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionDDR1 DRAM, 8MX36, 0.6ns, CMOS, PBGA144
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B144
- Memory Width36
- Organization8MX36
- Package CodeBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density301989888 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max0.6 ns
- Number of Ports1
- Number of Words8388608 words
- Terminal FinishTIN LEAD
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals144
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4
- Interleaved Burst Length2,4
- Package Equivalence CodeBGA144,12X18,40/32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.625 V
- Supply Voltage-Min (Vsup)2.375 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)250 MHz
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K4C89363AF-GCF5