K4B1G1646E-HCK00 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4B1G1646E-HCK00

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
DDR3 DRAM, 64MX16, 0.225ns, CMOS, PBGA96
Category
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
13.3
JESD-30 Code
R-PBGA-B96
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
96
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.225
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
67108864
Sequential Burst Length
4,8
Interleaved Burst Length
4,8
Package Equivalence Code
BGA96,9X16,32
Clock Frequency-Max (MHz)
800
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0