IXGX82N120A3 by Littelfuse | Sourcengine

Littelfuse IXGX82N120A3

Lifecycle status
Active
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 260A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2.05
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Fall Time-Max (ns)
1300
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
109
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1045
Collector Current-Max (IC) (A)
260
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
1200