IXFN200N10P
IXYS Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDiscrete Semiconductor Modules msft n-ch hiperfet-polar mini
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSOT-227B
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishNICKEL
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Reference StandardUL RECOGNIZED
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)200 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)4000 mJ
- Drain-source On Resistance-Max0.0075 ohm
- Pulsed Drain Current-Max (IDM)400 A
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IXFN200N10P