IXBL60N360 by Littelfuse | Sourcengine

Littelfuse IXBL60N360

Lifecycle status
NRFND
Description
Insulated Gate Bipolar Transistor, 92A I(C), 3600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
3.4
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
417
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
730
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1395
Collector Current-Max (IC) (A)
92
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
3600