IXBH10N170
IXYS Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionIGBT Transistors igbt bimosfet-high volt
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AD
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)63 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1800 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)20 A
- Power Dissipation-Max (Abs)140 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max1700 V
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
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IXBH10N170