IS45S81600E-7CTNA2-TR
Integrated Silicon Solution Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSynchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G54
- Memory Width8
- Package CodeTSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee4
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles4096
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization16MX8
- Number of Terminals54
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)5.4
- Number of Words Code16M
- Memory Density (bits)134217728
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)3.3
- Number of Words (words)16777216
- Sequential Burst Length1,2,4,8,FP
- Standby Current-Max (A)0.001
- Supply Current-Max (mA)160
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeTSOP54,.46,32
- Clock Frequency-Max (MHz)143
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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IS45S81600E-7CTNA2-TR