IRGTI0050M12 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRGTI0050M12

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X7
Configuration
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Additional Feature
FAST
Number of Elements
2
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Collector Current-Max (IC)
50 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED