IRG7RC10FDTRRPBF by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IRG7RC10FDTRRPBF

Lifecycle status
Active
Description
Insulated Gate Bipolar Transistor, 16.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
1.85
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (ns)
26
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
49
Power Dissipation-Max (W)
61
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
104
Turn-on Time-Nom (ton) (ns)
70
Gate-emitter Voltage-Max (V)
30
Turn-off Time-Max (toff) (ns)
351
Turn-off Time-Nom (toff) (ns)
250
Collector Current-Max (IC) (A)
16.5
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
600