IRG4CF50WB
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 900V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-XUUC-N
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max (V)6
- Collector-emitter Voltage-Max (V)900
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IRG4CF50WB
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IRG4CF50WB