IRFP440PBF by Vishay Intertechnology, Inc. | Sourcengine

Lifecycle status

Active
RoHS

RoHS compliant
Description

Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Category

Semiconductors / Transistors / Power Field Effect Transistors

Compliance Details

ECCN Governance

EAR
ECCN

EAR99

Quantity *

Target Price

Full factory pack Partial factory pack

Within 2 years

Supply Attributes	Supplier Availability	Price	Quantity	Total
Date Code Within 2 years Packaging Unknown Pack Condition Unknown Supplier Type Franchised distributor	Stock 100 Delivery Date MAY 31, 2022	46+ $ 2.47470 52+ $ 2.21480	Quantity Increments of 1	— Shipping Info

Technical Details

JESD-30 Code

R-PSFM-T3
Sub Category

FET General Purpose Power
Configuration

SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code

TO-247AC
Package Shape

RECTANGULAR
Package Style

FLANGE MOUNT Meter
Surface Mount

NO
Terminal Form

THROUGH-HOLE
FET Technology

METAL-OXIDE SEMICONDUCTOR
Operating Mode

ENHANCEMENT MODE
Case Connection

DRAIN
Terminal Finish

Pure Matte Tin (Sn) - annealed
Terminal Position

SINGLE
Additional Feature

AVALANCHE RATED
Number of Elements

1
Number of Terminals

3
Qualification Status

Not Qualified
Package Body Material

PLASTIC/EPOXY
Polarity/Channel Type

N-CHANNEL
Drain Current-Max (ID)

8.8 A
Transistor Application

SWITCHING
DS Breakdown Voltage-Min

500 V
Operating Temperature-Max

150 Cel
Moisture Sensitivity Level

1
Power Dissipation-Max (Abs)

150 W
Transistor Element Material

SILICON
Drain Current-Max (Abs) (ID)

8.8 A
Avalanche Energy Rating (Eas)

480 mJ
Peak Reflow Temperature (Cel)

NOT APPLICABLE
Drain-source On Resistance-Max

0.85 ohm
Pulsed Drain Current-Max (IDM)

35 A
Time@Peak Reflow Temperature-Max (s)

NOT APPLICABLE