Compliance Details

  • ECCN Governance
    EAR
  • ECCN
    EAR99

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Packaging type
Packaging condition
Date Code
Additional Information

6 suppliers for IRFD120PBF available to buy or to bid

6 suppliers available

Includes: Scheduled shipping up to a year • 3 year warranty • Learn more
Supply Attributes
Supplier Availability Price Quantity Total
  • Date Code
  • Packaging
    Tube
  • Pack Condition
    Full factory pack
  • Supplier Type
    Franchised distributor
  • Stock
    1,306
  • Delivery Date
    MAY 30, 2022
  • 100+
    $ 3.07050
Increments of 100
  • Date Code
  • Packaging
    Unknown
  • Pack Condition
    Unknown
  • Supplier Type
    Unknown
  • Stock
    2,853
Price depends on accepted bid
  • Date Code
  • Packaging
    Unknown
  • Pack Condition
    Unknown
  • Supplier Type
    Unknown
  • Stock
Price depends on accepted bid
  • Date Code
  • Packaging
    Unknown
  • Pack Condition
    Unknown
  • Supplier Type
    Unknown
  • Stock
    237,500
Price depends on accepted bid
  • Date Code
    20+
  • Packaging
    Unknown
  • Pack Condition
    Unknown
  • Supplier Type
    Unknown
  • Stock
    7,714
Price depends on accepted bid
  • Date Code
  • Packaging
    Unknown
  • Pack Condition
    Unknown
  • Supplier Type
    Unknown
  • Stock
    44
Price depends on accepted bid

Technical Details

  • JESD-30 Code
    R-PDIP-T4
  • Sub Category
    FET General Purpose Powers
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Pure Matte Tin (Sn) - annealed
  • Terminal Position
    DUAL
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Number of Terminals
    4
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID)
    1.3 A
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    100 V
  • Operating Temperature-Max
    175 Cel
  • Moisture Sensitivity Level
    1
  • Power Dissipation-Max (Abs)
    1.3 W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    1.3 A
  • Avalanche Energy Rating (Eas)
    100 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.27 ohm
  • Pulsed Drain Current-Max (IDM)
    10 A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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