IRFD120PBF Vishay Intertechnology, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
Compliance Details
- ECCN GovernanceEAR
- ECCNEAR99
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6 suppliers for IRFD120PBF available to buy or to bid
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Includes:
Scheduled shipping up to a year
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3 year warranty
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Supply Attributes
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Technical Details
- JESD-30 CodeR-PDIP-T4
- Sub CategoryFET General Purpose Powers
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishPure Matte Tin (Sn) - annealed
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)1.3 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max175 Cel
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)1.3 W
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)1.3 A
- Avalanche Energy Rating (Eas)100 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.27 ohm
- Pulsed Drain Current-Max (IDM)10 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED