Compliance Details

ECCN EAR99
ECCN Governance EAR
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Technical Details

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JESD-30 Code R-CBCC-N3
Sub Category Other Transistors
Configuration SINGLE WITH BUILT-IN DIODE
JESD-609 Code e0
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Surface Mount YES
Terminal Form NO LEAD
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Number of Elements 1
Number of Terminals 3
Qualification Status Not Qualified
Package Body Material UNSPECIFIED
Polarity/Channel Type P-CHANNEL
Drain Current-Max (ID) 18 A
Transistor Application SWITCHING
Turn-on Time-Max (ton) 164 ns
DS Breakdown Voltage-Min 100 V
Turn-off Time-Max (toff) 171 ns
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Power Dissipation-Max (Abs) 75 W
Transistor Element Material SILICON
Drain Current-Max (Abs) (ID) 18 A
Avalanche Energy Rating (Eas) 260 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 0.117 ohm
Pulsed Drain Current-Max (IDM) 72 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
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