Compliance Details

  • ECCN Governance
    EAR
  • ECCN
    EAR99
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Technical Details

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  • JESD-30 Code
    R-CBCC-N3
  • Sub Category
    Other Transistors
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    CHIP CARRIER Meter
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Number of Terminals
    3
  • Qualification Status
    Not Qualified
  • Package Body Material
    UNSPECIFIED
  • Polarity/Channel Type
    P-CHANNEL
  • Drain Current-Max (ID)
    18 A
  • Transistor Application
    SWITCHING
  • Turn-on Time-Max (ton)
    164 ns
  • DS Breakdown Voltage-Min
    100 V
  • Turn-off Time-Max (toff)
    171 ns
  • Operating Temperature-Max
    150 Cel
  • Operating Temperature-Min
    -55 Cel
  • Power Dissipation-Max (Abs)
    75 W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    18 A
  • Avalanche Energy Rating (Eas)
    260 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    0.117 ohm
  • Pulsed Drain Current-Max (IDM)
    72 A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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