Compliance Details

ECCN EAR99
ECCN Governance EAR
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Additional Information

1 traceable supplier for IPD50N04S309ATMA1 available

1 traceable supplier available

  • Includes:
  • Scheduled shipping up to a year
  • 3 year warranty
Supply Attributes
Supplier Availability Price Quantity Total
Supply Attributes
  • Date Code Within 2 years  
  • Packaging Bulk
  • Pack Condition Unknown
Supplier Availability
  • Stock
    11,005
  • Delivery Date MAY 21, 2021  
Price
  • 800+ $ 0.51210
  • 810+ $ 0.49469
  • 1,700+ $ 0.48056
  • 4,000+ $ 0.46996
  • 8,000+ $ 0.45229
Quantity
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Increments of 1
Total
$ 0.00

Technical Details

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JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-252
JESD-609 Code e3
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) 50 A
DS Breakdown Voltage-Min 40 V
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 140 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 0.009 ohm
Pulsed Drain Current-Max (IDM) 200 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
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