IPB180N10S403ATMA1 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG IPB180N10S403ATMA1

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
180
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
530
Pulsed Drain Current-Max (IDM) (A)
720
Drain-source On Resistance-Max (ohm)
0.0033