Compliance Details

ECCN EAR99
ECCN Governance EAR
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Technical Details

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JESD-30 Code R-PSSO-G6
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263
JESD-609 Code e3
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Surface Mount YES
Terminal Form GULL WING
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Additional Feature LOGIC LEVEL COMPATIBLE
Number of Elements 1
Number of Terminals 6
Qualification Status Not Qualified
Package Body Material PLASTIC/EPOXY
Polarity/Channel Type N-CHANNEL
Drain Current-Max (ID) 180 A
Transistor Application SWITCHING
DS Breakdown Voltage-Min 60 V
Operating Temperature-Max 175 Cel
Moisture Sensitivity Level 1
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 634 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Drain-source On Resistance-Max 0.0016 ohm
Pulsed Drain Current-Max (IDM) 720 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
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