HN58V65AT-10E by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. HN58V65AT-10E

Lifecycle status
EOL
RoHS
RoHS compliant
REACH
REACH compliant
Description
EEPROM
Category
Semiconductors Memory ICs EEPROMs EEPROM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Width
8
Length
11.8
Page Size
64 words
Ready/Busy
YES
Technology
CMOS
Toggle Bit
YES
Data Polling
YES
JESD-30 Code
R-PDSO-G28
Memory Width
8
Organization
8KX8
Package Code
TSOP1
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
65536 bit
Memory IC Type
EEPROM
Operating Mode
ASYNCHRONOUS
Terminal Pitch
0.55 mm
Access Time-Max
100 ns
Number of Words
8192 words
Parallel/Serial
PARALLEL
Seated Height-Max
1.2 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
25 mA
Number of Functions
1
Number of Terminals
28
Programming Voltage
3 V
Standby Current-Max
5.0E-6 Amp
Number of Words Code
8K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Command User Interface
NO
Package Equivalence Code
TSSOP28,.53,22
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3.3 V
Write Cycle Time-Max (tWC)
10 ms
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED