HN58C256AP-85E
Renesas Electronics Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionEEPROM
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- Width13.4
- Length35.6
- Endurance100000 Write/Erase Cycles
- Page Size64 words
- TechnologyCMOS
- Toggle BitYES
- Data PollingYES
- JESD-30 CodeR-PDIP-T28
- Memory Width8
- Organization32KX8
- Package CodeDIP
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density262144 bit
- Memory IC TypeEEPROM
- Operating ModeASYNCHRONOUS
- Terminal Pitch2.54 mm
- Access Time-Max85 ns
- Number of Words32768 words
- Parallel/SerialPARALLEL
- Seated Height-Max5.7 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max30 mA
- Number of Functions1
- Number of Terminals28
- Programming Voltage5 V
- Standby Current-Max2.0E-5 Amp
- Number of Words Code32K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceNO
- Package Equivalence CodeDIP28,.6
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)5.5 V
- Supply Voltage-Min (Vsup)4.5 V
- Supply Voltage-Nom (Vsup)5 V
- Moisture Sensitivity Level1
- Write Cycle Time-Max (tWC)10 ms
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HN58C256AP-85E
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HN58C256AP-85E