HM64YLB36512BP-28 by Renesas Technology Corp. | Sourcengine

Renesas Technology Corp. HM64YLB36512BP-28

Lifecycle status
Transferred
Description
Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119
Category
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B119
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
512KX36
Number of Functions
1
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
1.6
Number of Words Code
512K
Memory Density (bits)
18874368
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.24
Supply Voltage-Max (V)
2.63
Supply Voltage-Min (V)
2.38
Supply Voltage-Nom (V)
2.5
Number of Words (words)
524288
Standby Current-Max (A)
0.15
Standby Voltage-Min (V)
2.38
Supply Current-Max (mA)
450
Package Equivalence Code
BGA119,7X17,50
Clock Frequency-Max (MHz)
357
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0