HGT1S2N120BNDS
HARRIS SEMICONDUCTOR
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)2
- Collector-emitter Voltage-Max (V)1200
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HGT1S2N120BNDS