HGT1S20N35G3VLS9A
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max2.8 V
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Additional FeatureVOLTAGE CLAMPING
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationAUTOMOTIVE IGNITION
- Gate-emitter Voltage-Max10 V
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)20 A
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max2.3 V
- Collector-emitter Voltage-Max320 V
- Power Dissipation Ambient-Max150 W
0 suppliers available to buy or to bid for HGT1S20N35G3VLS9A
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
HGT1S20N35G3VLS9A
Send an RFQ
HGT1S20N35G3VLS9A