HGT1S15N120C3S9A
HARRIS SEMICONDUCTOR
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)42 ns
- Turn-off Time-Nom (toff)820 ns
- Collector Current-Max (IC)35 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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HGT1S15N120C3S9A