GT50J102
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- VCEsat-Max (V)2.7
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureHIGH SPEED
- Fall Time-Max (ns)300
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)200
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)400
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)240
- Turn-off Time-Nom (toff) (ns)500
- Collector Current-Max (IC) (A)50
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)8
- Collector-emitter Voltage-Max (V)600
- Power Dissipation Ambient-Max (W)200
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for GT50J102
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
GT50J102