Compliance Details

  • ECCN Governance
    EAR
  • ECCN
    EAR99
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Additional Information

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Technical Details

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  • VCEsat-Max
    3.4 V
  • Sub Category
    Insulated Gate BIP Transistors
  • Number of Elements
    1
  • Gate-emitter Voltage-Max
    20 V
  • Operating Temperature-Max
    150 Cel
  • Collector Current-Max (IC)
    250 A
  • Power Dissipation-Max (Abs)
    4800 W
  • Collector-emitter Voltage-Max
    6500 V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
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