FZ1200R12HE4P by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG FZ1200R12HE4P

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 1825A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X7
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
660
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Nom (toff) (ns)
1130
Collector Current-Max (IC) (A)
1825
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED