FQPF7N80C
ONSEMI
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220F Rail
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)6.6 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)56 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)580 mJ
- Drain-source On Resistance-Max1.9 ohm
- Pulsed Drain Current-Max (IDM)26.4 A
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FQPF7N80C