FHX35LG/002 by Sumitomo Electric Industries, Ltd. | Sourcengine

Sumitomo Electric Industries, Ltd. FHX35LG/002

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET
Category
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
4 V
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED