FHR02FH
Fujitsu Limited
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeS-CQMW-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishTIN LEAD
- Terminal PositionQUAD
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)7.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandK BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min3.5 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.18 W
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FHR02FH
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FHR02FH